QPD1008

Mfr.Part #
QPD1008
Manufacturer
Qorvo
Package/Case
NI-360
Datasheet
Download
Description
RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN

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Manufacturer :
Qorvo
Product Category :
RF JFET Transistors
Gain :
17.5 dB
Id - Continuous Drain Current :
4 A
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
3.2 GHz
Output Power :
162 W
Package / Case :
NI-360
Packaging :
Tray
Pd - Power Dissipation :
127 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
50 V
Vgs - Gate-Source Breakdown Voltage :
145 V
Datasheets
QPD1008

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