- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - Pre-Biased
- Collector- Emitter Voltage VCEO Max :
- - 50 V
- Continuous Collector Current :
- - 100 mA
- DC Collector/Base Gain hfe Min :
- 50
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-563
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 100 mW
- Series :
- RN2902
- Transistor Polarity :
- PNP
- Typical Input Resistor :
- 10 kOhms
- Typical Resistor Ratio :
- 1
- Datasheets
- RN2902FE,LF(CT
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962 -
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| RN2901,LF(CT | Toshiba | 10,571 | Bipolar Transistors - Pre-Biased TRANSISTOR |
| RN2901,LXHF(CT | Toshiba | 3,615 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNPx2 BRT, 4.7kOhm 4.7kOhm 4.7kOhm 4.7kOhm -50V (SOT-363) |
| RN2901FE(TE85L,F) | Toshiba | 15 | Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=200mW F=200MHz |
| RN2901FE,LXHF(CT | Toshiba | 15 | Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT563) |
| RN2902,LF(CT | Toshiba | 7,202 | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor |
| RN2902,LXHF(CT | Toshiba | 7,215 | Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) PNP x 2 , R1=10kOhm, R2=10kOhm, VCEO=-50V, IC=-0.1A (SOT-363) |
| RN2902FE,LXHF(CT | Toshiba | 15 | Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=10kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-563) |
| RN2903,LF(CT | Toshiba | 3,453 | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor |
| RN2903,LXHF(CT | Toshiba | 7,215 | Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) PNP x 2 , R1=22kOhm, R2=22kOhm, VCEO=-50V, IC=-0.1A (SOT-363) |
| RN2903A-I/RM103 | Microchip Technology | 30,793 | Sub-GHz Modules LoRa Transceiver Module 915MHz |
| RN2903A-I/RM105 | Microchip Technology | 14,397 | Sub-GHz Modules LoRa Transceiver Module 915MHz |
| RN2903A-I/RMSA103 | Microchip Technology | 4,215 | Sub-GHz Modules LoRa Transceiver Module South America |
| RN2903FE(TE85L,F) | Toshiba | 15 | Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=200mW F=200MHz |
| RN2903FE,LXHF(CT | Toshiba | 15 | Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=22kO, Q1BER=22kO, VCEO=-50V, IC=-0.1A (SOT-563) |
| RN2904,LF(CT | Toshiba | 15 | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor |
