DF200R12KE3

Mfr.Part #
DF200R12KE3
Manufacturer
Infineon Technologies
Package/Case
IS5a ( 62 mm )-5
Datasheet
Download
Description
IGBT Modules 1200V 200A DUAL

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Infineon Technologies
Product Category :
IGBT Modules
Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
1.7 V
Configuration :
Single
Continuous Collector Current at 25 C :
200 A
Gate-Emitter Leakage Current :
400 nA
Maximum Operating Temperature :
+ 125 C
Minimum Operating Temperature :
- 40 C
Package / Case :
IS5a ( 62 mm )-5
Packaging :
Tray
Pd - Power Dissipation :
1.04 kW
Datasheets
DF200R12KE3

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
DF2005-G Comchip Technology 117 Bridge Rectifiers VR=50V, IO=2A
DF2005S-G Comchip Technology 5,526 Bridge Rectifiers VR=50V, IO=2A
DF2005ST-G Comchip Technology 15 Bridge Rectifiers VR=50V IAV=2.0A
DF200AB160 SanRex 17 Discrete Semiconductor Modules Discrete Semiconductor Modules 1600V 200A Bridge Rectifiers
DF200AB80 SanRex 15 Discrete Semiconductor Modules Discrete Semiconductor Modules 800V 200A Bridge Rectifiers
DF200AE160 SanRex 21 Discrete Semiconductor Modules Discrete Semiconductor Modules 1600V 200A Bridge Rectifiers
DF200AE80 SanRex 15 Discrete Semiconductor Modules Discrete Semiconductor Modules 800V 200A Bridge Rectifiers
DF200R12PT4_B6 Infineon Technologies 20 IGBT Modules MEDIUM POWER ECONO
DF200R12W1H3FB11BOMA1 Infineon Technologies 38 IGBT Modules LOW POWER EASY
DF200R12W1H3_B27 Infineon Technologies 18 IGBT Modules LOW POWER EASY
DF201-G Comchip Technology 795 Bridge Rectifiers VR=100V, IO=2A
DF201S-G Comchip Technology 15 Bridge Rectifiers VR=100V, IO=2A
DF201ST-G Comchip Technology 15 Bridge Rectifiers VR=100V IAV=2.0A
DF202-G Comchip Technology 15 Bridge Rectifiers VR=200V, IO=2A
DF202S-G Comchip Technology 169 Bridge Rectifiers VR=200V, IO=2A