APT200GT60JR

Manufacturer :

Microsemi / Microchip

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

600 V

Collector-Emitter Saturation Voltage :

2 V

Configuration :

Single

Continuous Collector Current at 25 C :

195 A

Gate-Emitter Leakage Current :

300 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Package / Case :

ISOTOP-4

Packaging :

Tube

Pd - Power Dissipation :

500 W

Product :

IGBT Silicon Carbide Modules