- Manufacturer :
- IXYS
- Product Category :
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max :
- 3000 V
- Collector-Emitter Saturation Voltage :
- 2.7 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 130 A
- Maximum Gate Emitter Voltage :
- 25 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- PLUS 247-3
- Pd - Power Dissipation :
- 625 W
- Technology :
- SI
- Datasheets
- IXBX55N300
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