GT50N322A

Mfr.Part #
GT50N322A
Manufacturer
Toshiba
Package/Case
TO-3PN-3
Datasheet
Download
Description
IGBT Transistors DISCRETE IGBT

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Manufacturer :
Toshiba
Product Category :
IGBT Transistors
Collector- Emitter Voltage VCEO Max :
1000 V
Collector-Emitter Saturation Voltage :
2.2 V
Configuration :
Single
Continuous Collector Current at 25 C :
50 A
Maximum Gate Emitter Voltage :
25 V
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-3PN-3
Packaging :
Tube
Pd - Power Dissipation :
156 W
Series :
GT50N322
Technology :
SI
Datasheets
GT50N322A

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