- Manufacturer :
- IXYS
- Product Category :
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max :
- 3 kV
- Collector-Emitter Saturation Voltage :
- 2.7 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 34 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- ISOPLUS-i4-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 150 W
- Series :
- Very High Voltage
- Technology :
- SI
- Datasheets
- IXBF20N300
Manufacturer related products
Catalog related products
-
-
-
ROHM SemiconductorIGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT
-
ROHM SemiconductorIGBT Transistors 10us Short-Circuit Tolerance, 1200V 15A, Automotive Field Stop Trench IGBT
-
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
IXBF10N300C | IXYS | 15 | MOSFET |
IXBF14N250 | IXYS | 15 | Gate Drivers 28 Amps 2500V 4.0 V Rds |
IXBF14N250 | IXYS | 15 | Gate Drivers 28 Amps 2500V 4.0 V Rds |
IXBF15N300C | IXYS | 15 | MOSFET |
IXBF20N360 | IXYS | 68 | IGBT Transistors 3600V/45A Reverse Conducting IGBT |
IXBF32N300 | IXYS | 15 | IGBT Transistors IGBT BIMSFT-VERY HIVOLT |
IXBF40N160 | IXYS | 15 | IGBT Transistors 40 Amps 1600V |
IXBF42N300 | IXYS | 15 | MOSFET IGBT DISC IGBT |
IXBF50N360 | IXYS | 15 | IGBT Transistors 3600V/70A Reverse Conducting IGBT |
IXBF55N300 | IXYS | 15 | IGBT Transistors High Voltage High Gain BIMOSFET |
IXBF9N160G | IXYS | 31 | IGBT Transistors 9 Amps 1600V 1600V 9A |