- Manufacturer :
- IXYS
- Product Category :
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 2.3 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 260 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Pd - Power Dissipation :
- 1.36 kW
- Technology :
- SI
- Datasheets
- IXYH120N65C3
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