SQSA12CENW-T1_GE3

Mfr.Part #
SQSA12CENW-T1_GE3
Manufacturer
Vishay / Siliconix
Package/Case
PowerPAK-1212-8W
Datasheet
Download
Description
MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Vishay / Siliconix
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
18 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
PowerPAK-1212-8W
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
62.5 W
Qg - Gate Charge :
31 nC
Rds On - Drain-Source Resistance :
22 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2.5 V
Datasheets
SQSA12CENW-T1_GE3

Manufacturer related products

  • Vishay / Siliconix
    Power Management IC Development Tools Evaluation Board For SIC464ED
  • Vishay / Siliconix
    Power Management IC Development Tools Development Board For SiP32429 Series
  • Vishay / Siliconix
    Power Management IC Development Tools Reference Board for SIP403 series
  • Vishay / Siliconix
    Power Management IC Development Tools Development Board For SiP32408 Series
  • Vishay / Siliconix
    Power Management IC Development Tools Development Board For SiP32430 Series

Catalog related products

Related products

Part Manufacturer Stock Description
SQSA70CENW-T1_GE3 Vishay / Siliconix 15 MOSFET N-CHANNEL 150-V (D-S) 175C MOSFET
SQSA80ENW-T1_GE3 Vishay Semiconductors 14,415 MOSFET 80V Vds PowerPAK AEC-Q101 Qualified