- Manufacturer :
- Toshiba
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 2 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- UF-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 500 mW
- Qg - Gate Charge :
- 5.3 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 117 mOhms
- Technology :
- SI
- Tradename :
- U-MOSII
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 30 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.6 V
- Datasheets
- SSM6J402TU,LF
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SSM6322ACPZ-R2 | Analog Devices Inc. | 345 | Audio Amplifiers Next gen mobile phone HiFi headphone amp |
SSM6322ACPZ-R7 | Analog Devices Inc. | 15 | Audio Amplifiers Next gen mobile phone HiFi headphone amp |
SSM6322ACPZ-RL | Analog Devices Inc. | 15 | Audio Amplifiers Next gen mobile phone HiFi headphone amp |
SSM6322CP-EBZ | Analog Devices Inc. | 15 | Audio IC Development Tools Eval board for 24 lead LFCSP |
SSM6G18NU,LF | Toshiba | 15 | MOSFET MOSFET |
SSM6H19NU,LF | Toshiba | 14,251 | MOSFET UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz |
SSM6J205FE | Toshiba | 15 | MOSFET Vds=-20V Id=-800mA 6Pin |
SSM6J206FE,LF | Toshiba | 15 | MOSFET SS FET P-Ch 0.32Ohm -2A -8V |
SSM6J207FE,LF | Toshiba | 2,042 | MOSFET Small-signal FET 0.491Ohm -1.4A -30V |
SSM6J212FE,LF | Toshiba | 13,616 | MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW |
SSM6J213FE(TE85L,F | Toshiba | 4,807 | MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF |
SSM6J214FE(TE85L,F | Toshiba | 2,541 | MOSFET LowON Res MOSFET ID=-3.6A VDSS=-30V |
SSM6J215FE(TE85L,F | Toshiba | 3,198 | MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF |
SSM6J216FE,LF | Toshiba | 4,471 | MOSFET LowON Res MOSFET ID=--4.8A VDSS=-12V |
SSM6J401TU,LF | Toshiba | 1,764 | MOSFET MOSFET |