BSD214SNH6327XTSA1

Mfr.Part #
BSD214SNH6327XTSA1
Manufacturer
Infineon Technologies
Package/Case
SOT-363-6
Datasheet
Download
Description
MOSFET SMALL SIGNAL MOSFETS

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Infineon Technologies
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
1.5 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
SOT-363-6
Packaging :
Cut Tape, Reel
Pd - Power Dissipation :
500 mW
Qg - Gate Charge :
800 pC
Rds On - Drain-Source Resistance :
250 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
20 V
Vgs - Gate-Source Voltage :
- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage :
700 mV
Datasheets
BSD214SNH6327XTSA1

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
BSD214SN H6327 Infineon Technologies 2,178 MOSFET SMALL SIGNAL MOSFETS
BSD223P H6327 Infineon Technologies 63,536 MOSFET P-Ch
BSD223PH6327 INFINEON 2,415 New original
BSD223PH6327XTSA1 Infineon Technologies 83,595 MOSFET P-Ch DPAK-2
BSD235C H6327 Infineon Technologies 10,815 MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
BSD235CH6327 INFINEON 42,647 New original
BSD235CH6327XT Infineon Technologies 421 MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
BSD235CH6327XTSA1 Infineon Technologies 10,815 MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
BSD235N H6327 Infineon Technologies 3,947 MOSFET N-Ch 20V 950mA SOT-363-6
BSD235NH6327XT Infineon Technologies 50,091 MOSFET N-Ch 20V 950mA SOT-363-6
BSD235NH6327XTSA1 Infineon Technologies 1,249 MOSFET N-Ch 20V 950mA SOT-363-6