SCT20N120H

Mfr.Part #
SCT20N120H
Manufacturer
STMicroelectronics
Package/Case
HIP247-3
Datasheet
Download
Description
MOSFET PTD NEW MAT & PWR SOLUTION

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Manufacturer :
STMicroelectronics
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
20 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
HIP247-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
175 W
Qg - Gate Charge :
45 nC
Rds On - Drain-Source Resistance :
239 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
1.2 kV
Vgs - Gate-Source Voltage :
- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage :
3.5 V
Datasheets
SCT20N120H

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