SCT2080KEC

Mfr.Part #
SCT2080KEC
Manufacturer
ROHM Semiconductor
Package/Case
TO-247-3
Datasheet
Download
Description
MOSFET N-Ch MOSFET 1200V Silicon Carbide SiC

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Manufacturer :
ROHM Semiconductor
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
40 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
262 W
Qg - Gate Charge :
106 nC
Rds On - Drain-Source Resistance :
80 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
1.2 kV
Vgs - Gate-Source Voltage :
- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage :
1.6 V
Datasheets
SCT2080KEC

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