SQSA80ENW-T1_GE3

Mfr.Part #
SQSA80ENW-T1_GE3
Manufacturer
Vishay Semiconductors
Package/Case
PowerPAK-1212-8
Datasheet
Download
Description
MOSFET 80V Vds PowerPAK AEC-Q101 Qualified

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Vishay Semiconductors
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
18 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
PowerPAK-1212-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
62.5 W
Qg - Gate Charge :
17 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
21 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
80 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2 V
Datasheets
SQSA80ENW-T1_GE3

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
SQSA12CENW-T1_GE3 Vishay / Siliconix 5,793 MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET
SQSA70CENW-T1_GE3 Vishay / Siliconix 15 MOSFET N-CHANNEL 150-V (D-S) 175C MOSFET