MAGX-011086

Mfr.Part #
MAGX-011086
Manufacturer
MACOM
Package/Case
QFN-24
Datasheet
Download
Description
RF JFET Transistors M/A-COM Technology Solutions

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
MACOM
Product Category :
RF JFET Transistors
Gain :
9 dB
Id - Continuous Drain Current :
50 mA
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
DC to 6 GHz
Output Power :
4 W
Package / Case :
QFN-24
Technology :
GaN-on-Si
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
28 V
Vgs - Gate-Source Breakdown Voltage :
- 10 V to 3 V
Datasheets
MAGX-011086

Manufacturer related products

Catalog related products

  • Qorvo
    RF JFET Transistors 2.5-2.7GHz 40Wx80W GaN Transistor Pair
  • Qorvo
    RF JFET Transistors 3.4-3.8GHz 15W 50V GaN Single Channel
  • Wolfspeed / Cree
    RF JFET Transistors 270W GaN HEMT 48V 2496 to 2690MHz
  • Wolfspeed / Cree
    RF JFET Transistors 200W GaN HEMT 48V 3400 to 3600MHz
  • Wolfspeed / Cree
    RF JFET Transistors 280W GaN HEMT 48V 3400 to 3600MHz

Related products

Part Manufacturer Stock Description
MAGX-011086 MACOM 231 RF JFET Transistors M/A-COM Technology Solutions
MAGX-100027-015S0P MACOM 54 RF Amplifier GaN Amplifier 50 V, 15 W DC - 2.7 GHz
MAGX-100027-015STP MACOM 15 RF Amplifier GaN Amplifier 50 V, 15 W DC - 2.7 GHz
MAGX-100027-050C0P MACOM 80 RF Amplifier GaN Amplifier 50 V, 50 W, DC - 2700 MHz
MAGX-100027-050CTP MACOM 15 RF Amplifier GaN Amplifier 50 V, 50 W, DC - 2700 MHz
MAGX-100027-100C0P MACOM 30 RF Amplifier GaN Amplifier 50 V, 100 W DC - 2.7 GHz
MAGX-100027-100CTP MACOM 15 RF Amplifier GaN Amplifier 50 V, 100 W DC - 2.7 GHz
MAGX-100027-300C0P MACOM 35 RF Amplifier GaN Amplifier 50 V, 300 W DC - 2.7 GHz
MAGX-100027-300CTP MACOM 15 RF Amplifier GaN Amplifier 50 V, 300 W DC - 2.7 GHz